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1. product profile 1.1 general description standard level n-channel mosfet in lfpak package qualified to 175 c. this product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 features and benefits ? advanced trenchmos provides low rdson and low gate charge ? high efficiency gains in switching power converters ? improved mechanical and thermal characteristics ? lfpak provides maximum power density in a power so8 package 1.3 applications ? dc-to-dc convertors ? lithium-ion battery protection ? load switching ? motor control ? server power supplies 1.4 quick reference data PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet rev. 02 ? 12 july 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175c --40v i d drain current t mb =25c; v gs =10v; see figure 1 --100a p tot total power dissipation t mb = 25 c; see figure 2 --106w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =15a; t j = 100 c; see figure 12 --5.6m ? v gs =10v; i d =15a; t j =25c; see figure 12 ; see figure 13 -3.24.2m ?
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 2 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 2. pinning information 3. ordering information dynamic characteristics q gd gate-drain charge v gs =10v; i d =25a; v ds =20v; see figure 14 ; see figure 15 -7-nc q g(tot) total gate charge - 38 - nc avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =100a; v sup 40 v; unclamped; r gs =50 ? --77mj table 1. quick reference data ?continued symbol parameter conditions min typ max unit table 2. pinning information pin symbol description simplified outline graphic symbol 1ssource sot669 (lfpak) 2ssource 3ssource 4 g gate mb d drain mb 1234 s d g mbb076 table 3. ordering information type number package name description version PSMN4R0-40YS lfpak plastic single-ended surfac e-mounted package (lfpak); 4 leads sot669
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 3 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 4. limiting values table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 40 v v dgr drain-gate voltage t j 25 c; t j 175 c; r gs =20k ? -40v v gs gate-source voltage -20 20 v i d drain current v gs =10v; t mb = 100 c; see figure 1 -83a v gs =10v; t mb =25c; see figure 1 - 100 a i dm peak drain current pulsed; t p 10 s; t mb =25c; see figure 3 - 472 a p tot total power dissipation t mb =25c; see figure 2 - 106 w t stg storage temperature -55 175 c t j junction temperature -55 175 c t sld(m) peak soldering temperature - 260 c source-drain diode i s source current t mb = 25 c - 100 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 472 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d = 100 a; v sup 40 v; unclamped; r gs =50 ? -77mj fig 1. continuous drain current as a function of mounting base temperature fig 2. normalized total power dissipation as a function of mounting base temperature 003aad266 0 20 40 60 80 100 120 0 50 100 150 200 t mb ( c) i d (a) (1) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 4 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aad321 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) i d (a) dc limit r dson = v ds / i d 100ms 10ms 1ms 100 s 10 s (1)
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 5 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 4 - 0.54 1.42 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 003aac657 single shot 0.2 0.1 0.05 0.02 10 -3 10 -2 10 -1 1 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) = 0.5 t p t p t t p t =
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 6 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 6. characteristics table 6. characteristics tested to jedec standards where applicable. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j = -55 c 36 - - v i d =250a; v gs =0v; t j =25c 40--v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j =-55c; see figure 10 ; see figure 11 --4.6v i d =1ma; v ds =v gs ; t j = 175 c; see figure 10 ; see figure 11 1--v i d =1ma; v ds =v gs ; t j =25c; see figure 10 ; see figure 11 234v i dss drain leakage current v ds =40v; v gs =0v; t j =25c --3a v ds =40v; v gs =0v; t j =125c --40a i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - - 100 na v gs =-20v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =10v; i d =15a; t j = 100 c; see figure 12 --5.6m ? v gs =10v; i d =15a; t j = 175 c; see figure 12 --8m ? v gs =10v; i d =15a; t j =25c; see figure 12 ; see figure 13 -3.24.2m ? r g internal gate resistance (ac) f=1mhz - 0.62 - ? dynamic characteristics q g(tot) total gate charge i d =0a; v ds =0v; v gs =10v - 31 - nc i d =25a; v ds =20v; v gs =10v; see figure 14 ; see figure 15 -38-nc q gs gate-source charge - 12 - nc q gs(th) pre-threshold gate-source charge i d =25a; v ds =20v; v gs =10v; see figure 14 -7-nc q gs(th-pl) post-threshold gate-source charge -5-nc q gd gate-drain charge i d =25a; v ds =20v; v gs =10v; see figure 14 ; see figure 15 -7-nc v gs(pl) gate-source plateau voltage i d =25a; v ds =20v; see figure 14 -4.8-v c iss input capacitance v ds =20v; v gs = 0 v; f = 1 mhz; t j =25c; see figure 16 - 2410 - pf c oss output capacitance - 504 - pf c rss reverse transfer capacitance - 266 - pf t d(on) turn-on delay time v ds =20v; r l =0.8 ? ; v gs =10v; r g(ext) =4.7 ? -18-ns t r rise time - 19 - ns t d(off) turn-off delay time - 34 - ns t f fall time - 12 - ns
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 7 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 17 - 0.83 1.2 v t rr reverse recovery time i s =50a; di s /dt = -100 a/s; v gs =0v; v ds =20v -42-ns q r recovered charge - 45 - nc table 6. characteristics ?continued tested to jedec standards where applicable. symbol parameter conditions min typ max unit fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 7. input and reverse transfer capacitances as a function of gate-source voltage; typical values fig 8. forward transconductance as a function of drain current; typical values 003aad154 0 20 40 60 80 100 120 01234 v ds (v) i d (a) 6.5 10 5.5 5 6 v gs (v) = 4.5 20 003aad155 0 20 40 60 80 100 02468 v gs (v) i d (a) t j = 150 c t j = 25 c t j = 175 c 003aad159 0 1000 2000 3000 4000 036912 v gs (v) c (pf) c iss c rss 003aad160 0 20 40 60 80 020406080 i d (a) g fs (s)
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 8 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet fig 9. drain-source on-state resistance as a function of gate-source voltage; typical values fig 10. sub-threshold drain current as a function of gate-source voltage fig 11. gate-source threshold voltage as a function of junction temperature fig 12. normalized drain-source on-state resistance factor as a function of junction temperature 003aad161 0 3 6 9 12 15 0 5 10 15 20 v gs (v) r dson (m ) 03aa35 v gs (v) 06 4 2 10 ?4 10 ?5 10 ?2 10 ?3 10 ?1 i d (a) 10 ?6 min typ max t j (c) ?60 180 120 060 003aad280 2 3 1 4 5 v gs(th) (v) 0 max typ min 03aa27 0 0.5 1 1.5 2 ? 60 0 60 120 180 t j ( c) a
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 9 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet fig 13. drain-source on-state resistance as a function of drain current; typical values fig 14. gate charge waveform definitions fig 15. gate-source voltage as a function of gate charge; typical values fig 16. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aad162 0 3 6 9 12 0 30 60 90 120 i d (a) r dson (m ) 6.5 8 6 7 v gs (v) = 5.5 10 20 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) 003aad157 0 2 4 6 8 10 010203040 q g (nc) v gs (v) v ds = 20v 8v 32v 003aad158 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c rss c oss
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 10 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet fig 17. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aad156 0 20 40 60 80 100 0 0.3 0.6 0.9 1.2 v sd (v) i s (a) t j = 25 c t j = 150 c t j = 175 c
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 11 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 7. package outline fig 18. package outline sot669 (lfpak) references outline version european projection issue date iec jedec jeita sot669 mo-235 04-10-13 06-03-16 0 2.5 5 mm scale e e 1 b c 2 a 2 a 2 bc a e unit dimensions (mm are the original dimensions) mm 1.10 0.95 a 3 a 1 0.15 0.00 1.20 1.01 0.50 0.35 b 2 4.41 3.62 b 3 2.2 2.0 b 4 0.9 0.7 0.25 0.19 c 2 0.30 0.24 4.10 3.80 6.2 5.8 h 1.3 0.8 l 2 0.85 0.40 l 1.3 0.8 l 1 8 0 wy d (1) 5.0 4.8 e (1) 3.3 3.1 e 1 (1) d 1 (1) max 0.25 4.20 1.27 0.25 0.1 1 234 mounting base d 1 c plastic single-ended surface-mounted package (lfpak); 4 leads sot669 e b 2 b 3 b 4 h d l 2 l 1 a a w m c c x 1/2 e yc (a ) 3 l a a 1 detail x note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included.
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 12 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes PSMN4R0-40YS v.2 20100712 product data sheet - PSMN4R0-40YS v.1 modifications: ? various changes to content. PSMN4R0-40YS v.1 20090625 product data sheet - -
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 13 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
PSMN4R0-40YS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 12 july 2010 14 of 15 nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PSMN4R0-40YS n-channel lfpak 40 v 4.2 m ? standard level mosfet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 12 july 2010 document identifier: PSMN4R0-40YS please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 9 legal information. . . . . . . . . . . . . . . . . . . . . . . .13 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 10 contact information. . . . . . . . . . . . . . . . . . . . . .14

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